半导体物理

主讲: 蒋玉龙 教授,博导 / 复旦大学

开课时间:2017年05月16日

开课期次:5期

这是一门跨越微电子科学与工程专业和物理学专业的上海市精品课程。《半导体物理》作为两个专业的骨干课程之一,理论性和系统性均较强。已故复旦大学老校长谢希德院士是中国半导体物理学科和表面物理学科开创者之一。谢希德和黄昆合著撰写了新中国第一部《半导体物理学》,1958年由科学出版社出版。此后国内的《半导体...

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这门课程会讲什么?

半导体能带论,半导体载流子统计,半导体载流子输运, 非平衡载流子,pn结 ,金属-半导体接触,半导体表面与MIS结构,异质结。


一、学分课程混合式教学设计方案 

1.1 教学流程设计


1.2 一个双周教学小周期

 

 

1.3 设计要义

充分依靠在线课程,以两周作为一个基本任务周期,在时间上前置推送教学视频等学习任务到具体个人,留出单周课堂时空让学生自由安排完成学习任务,双周课前让学生提交对应章节的学习心得报告,评阅后的心得报告提前发给全体同学并在双周课堂上由各个同学逐个展示汇报,报告过程中师生全体针对各个报告内容的疑难点进行有限讨论,并利用手机APP工具开展快速测试反馈。双周课堂翻转互动结束后,教师开始推送新一轮的双周教学任务。

1.4 对校本班级,慕课定位为辅助教学,学生成绩以线下期中和期末考试为主。


二、对社会学习者,采取纯线上考核方式,每章都有在线试题,课程结束还会从题库随机组卷对学生进行学习效果的测试,考试合格签发电子版的结课证书。


你将收获什么?



1、 掌握半导体中电子运动规律和特点

2、 了解半导体的基本电学性质

3、掌握半导体基本单元器件pn结二极管肖特基二极管和MOS电容的工作原理


适合什么人学习?

已经完整学习过大学物理(含固体物理和统计物理)和高等数学,且准备从事集成电路相关工作的人。

这是一门专业性非常强的课程,建议连续6周,集中性投入学习,需要有较强的学习毅力。

师资团队

蒋玉龙 教授,博导  | 复旦大学

研究领域

1995-2005年在复旦大学先后获得物理学学士、微电子学与固体电子学硕士和博士学位。2005年7月至今在复旦大学微电子学院任教。《半导体物理》课程师从陆昉教授,目前主要从事集成电路先进材料、工艺与器件研究,特别是集成电路MOS器件源漏栅接触技术方面的研究;先进铜互连技术,纳米新型器件研究;功率半导体器件研究;柔性器件研究;负责上海市精品课程《半导体物理》(微电子方向)和上海市重点课程《半导体器件原理》。


论文与著作

  1. Lin-Lin Wang ; Hao Yu ; Marc Schaekers; Jean-Luc Everaert; Dan Mocuta; Naoto Horiguchi; Nadine Collaert; Kristin De Meyer; Yu-Long Jiang*, Improved Ohmic Performance by the Metallic Bilayer Contact Stack of Oxygen-incorporated La/Ultrathin TiSix on n-Si, IEEE Transactions on Electron Devices, 2018, 65(5):1869~1872.

  2. Jian Zhang ; Hao Yu ; Lin-Lin Wang; Marc Schaekers; D. Mocuta; Naoto Horiguchi; Nadine Collaert; Kristin De Meyer; Yu-Long Jiang*, Thermal Stability of TiN/Ti/p+-Si0.3Ge0.7 Contact With Ultralow Contact Resistivity, IEEE Electron Device Letters, 2018.1.1, 39(1): 83~86.

  3. Lin-Lin Wang ; Hao Yu ; M. Schaekers; J. -L. Everaert; A. Franquet; B. Douhard; L. Date; J. del Agua Borniquel; K. Hollar; F. A. Khaja; W. Aderhold; A. J. Mayur; J. Y. Lee; H. van Meer; D. Mocuta; N. Horiguchi; N. Collaert; K. De Meyer; Yu-Long Jiang*, Comprehensive study of Ga activation in Si, SiGe and Ge with 5 × 10−10 Ω·cm2 contact resistivity achieved on Ga  doped Ge using nanosecond laser activation, 2017 IEEE International Electron Devices Meeting (IEDM), 2017.12.2-2017.12.6 

  4.  Lin-Lin Wang ; Jian-Chi Zhang; Yu-Long Jiang*, Optimization of Ni(Pt)/Si-cap/SiGe Silicidation for pMOS Source/Drain Contact, IEEE Transactions on Electron Devices, 2017.5.1, 64(5): 2067~2071

  5. Hao Yu ; Marc Schaekers; Jian Zhang; Lin-Lin Wang; Jean-Luc Everaert; Naoto Horiguchi; Yu-Long Jiang* ; Dan Mocuta; Nadine Collaert; Kristin De Meyer, TiSi(Ge) Contacts Formed at Low Temperature Achieving Around 2×10−9 Ω cm2 Contact Resistivities to p-SiGe, IEEE Transactions on Electron Devices, 2017.2.1, 64(2): 500~506

  6. Lin-Lin Wang, Wu Peng, and Yu-Long Jiang*, A Modified 1/f Noise Model for MOSFETs With Ultra-ThinGate Oxide, IEEE Electron Device Letters, 2016, 37(5): 537~540.

  7. Jian-Chi  Zhang, Yu-Long Jiang*,Bing-Zong  Li, “Thermal StabilityImprovement Induced by Laser Annealing For 50-Å Ni(Pt)  Film Silicidation”, IEEE Trans. Electron  Dev., 63(2), pp. 751-754, 2016.

  8. Jing-Hang  Hu, Jian-chi Zhang,Zong-Yuan Fu, Jun-hui Weng, Wei-Bo Chen, Shi-Jin Ding*, Yu-Long Jiang*, andGuo-dong Zhu*,  “Fabrication ofElectrically Bistable Organic Semiconducting/ Ferroelectric  Blend Films by Temperature Controlled SpinCoating”, ACS Appl. Mater. Interfaces, 7, 6325−6330, 2015. 

  9. Zong-Yuan  Fu, Jian-Chi Zhang,Jing-Hang Hu, Yu-Long  Jiang*, Shi-JinDing*, and Guo-Dong Zhu*, “Determining the influence  of ferroelectric polarization on electricalcharacteristics in organic  ferroelectricfield-effect transistors”, Chin.  Phys.B, 24(5),p. 058502-1-9, 2015.

  10. Zong-Yuan  Fu, Jian-Chi Zhang,Jun-Hui Weng, Wei-Bo Chen, Yu-Long Jiang*, Shi-Jin Ding*, and Guo-Dong Zhu*,“Piezoresponse  Force Microscopy Study onFerroelectric Polarization of Ferroelectric Polymer  Thin Films with Various StructuralConfigurations. ”AIP Advances, 5, p. 097211, 2015. 

  11. Lin-Lin  Wang, Wu Peng, Yu-LongJiang*,  Bing-Zong Li, “EffectiveSchottky Barrier Height Lowering by TiN Capping Layer for TiSix/Si Power Diode”, IEEE Electron Dev. Lett., 36(6), pp. 597-599, 2015.

  12. Jing-hang  Hu, Jian-Chi Zhang,Zong-Yuan Fu, Yu-Long  Jiang*, Shi-JinDing*, Guo-Dong Zhu*, “Solvent Vapor Annealing of  Ferroelectric P(VDF-TrFE) Thin Films,” ACSAppl. Mater. Interfaces, 6(20), p. 18312, 2014. 

  13. Rong-Hong  Chen, Yu-Long Jiang*,and Bing-Zong  Li, “InfluenceofPost-annealing on Resistivity of VOx Thin Film”, IEEE Electron Dev. Lett.,35(7), pp.  780-782, 2014. 

  14. Jian-chi  Zhang, Yu-Long Jiang*,Guo-Dong  Zhu, Guo-Ping Ru, and Bing-ZongLi, “DirectObservation of Dipole Influence Induced by a SpinCoated Organic InterfacialLayer on EffectiveSchottky  Barrier Height ModulationofHg/Si Contact”, IEEE Electron Dev. Lett., 35(2), pp. 262-264, 2014.

  15. Long  Li, Yu-Long Jiang*, and Bing-Zong  Li, “Ultrathin Ni(Pt)Si Film FormationInduced by LaserAnnealing”, IEEE Electron Dev. Lett., 34(7), pp.  912-914, 2013.

  16. Shao-Song  Fu, Hao Yu, Yu-LongJiang*, and Guo-Dong  Zhu, “Ultravioletirradiation induced polarizationrestoration in electricallyfatigued ferroelectric polymer films”, J. Appl. Phys., 113,p. 114102, 2013. 

  17. Hao  Yu, Qi Xie, Yu-Long Jiang*, Davy  Deduytsche, and Christophe Detavernier,“Fermi Level DepinningFailure for Al/GeO2/GeContacts”, ECS Solid State Lett., 1(5), pp. 79-81, 2012. 

  18. Yu-Long Jiang*,  Qi Xie, Xing-PingQu, David Wei Zhang, Davy Deduytsche, and Christophe  Detavernier, “TaN/Ta as an EffectiveDiffusion Barrier forDirectContact of Copper and NiSi”, Electrochem. Solid-State.  Lett., 1(1), pp. H9-H13, 2012. 

  19. Shao-Song  Fu, Hao Yu, Xiao-YaLuo, Yu-Long  Jiang*, and Guo-Dong Zhu,“TheInfluence of Ultraviolet Irradiation on PolarizationFatigue in FerroelectricPolymer Films”, IEEE Electron Dev.Lett., 33(1), pp. 95-97, 2012. 

  20. Yu-Long Jiang*,  Qi Xie, Xing-PingQu, Guo-Ping Ru, David Wei Zhang, Davy Deduytsche, and Christophe  Detavernier, “Effective SchottkyBarrierHeight Modulationby an Ultrathin Passivation Layer of GeOxNyforAl/n-Ge(100) Contact”, Electrochem.Solid-State. Lett.,14(12), pp. H487-H490, 2011. 

  21. Guo-Dong  Zhu, Yan Gu, Hao Yu,Shao-Song Fu, and Yu-Long  Jiang*,“Polarizationfatigue in ferroelectric vinylidenefluorideandtrifluoroethylene copolymerthin films”, J. Appl.Phys., 110, p. 024109, 2011. 

  22. Quan-Li  Li, Qi Xie, Yu-LongJiang*,  Guo-Ping Ru, Xing-Ping Qu,Bing-Zong Li, David Wei Zhang, Davy Deduytsche, and  Christophe Detavernier,“Annealinginducedhysteresis suppression for TiN/HfO2/GeON/p-Ge capacitor”, Semicond. Sci. Technol., 26 , p. 125003, 2011. 

  23. Xiao  Guo, Hao Yu, Yu-LongJiang*,  Guo-Ping Ru, David Wei Zhang,and Bing-Zong Li, “Study ofnickel silicide formation on Si(110) substrate”, App. Surf. Sci., 257, pp. 10571– 10575, 2011. 

  24. Xiao-Rong  Wang, Yu-Long Jiang*,Qi Xie,  Christophe Detavernier, Guo-PingRu, Xing-Ping Qu, and Bing-Zong Li, “Annealingeffect  on the metalgate effective work functionmodulation for the Al/TiN/SiO2/p-Sistructure”, Microelectron.  Eng., 88, p. 573, 2011. 

  25. Yu-Long Jiang,  Xing-Ping Qu*,Guo-Ping Ru, and Bing-Zong Li, “Schottkybarrierheight lowering  induced by CoSi2 nanostructure”, Appl.  Phys. A., 99 , pp. 93–98, 2010. 

  26. Yu-Long Jiang*,  Guo-Ping Ru,Xing-Ping Qu, Bing-Zong Li, “X-rayphotoelectron spectroscopy  studyofNiSi formation on shallow junctions”,Appl. Surf. Sci., 256, pp. 698–701, 2009. 

  27. Yu-Fei  Huang, Yu-Long Jiang*,Guo-Ping  Ru, and Bing-Zong Li, “StudyofNi/Si(1 0 0) solid-state reaction with Aladdition”, Appl. Surf. Sci., 254 , pp. 5631–5634, 2008. 

  28. Yu-Fei  Huang, Yu-Long Jiang*,Guo-Ping  Ru, Xing-Ping Qu, and Bing-ZongLi, “Study ofNi/Si(100) solid-state reaction with Yaddition”, Microelectron. Eng., 85, pp. 2013-2015, 2008. 

  29. Jia  Luo, Yu-Long Jiang*, Guo-Ping Ru,  Bing-Zong Li, and Paul KChu, “SilicidationofNi(Yb) Film onSi(001)”, J. Electron. Material., 37, pp.  245-248, 2008. 

  30. Yu-Long Jiang*,  Qi Xie,Christophe Detavernier, R. L. VanMeirhaeghe, Guo-Ping Ru, Xing-Ping  Qu, Bing-Zong Li, PaulK Chu, “Growthof PinholeFreeYtterbium Silicide Film by Solid-State Reaction on Si(001) with a ThinAmorphous Si Interlayer”, J.Appl. Phys., 102, p. 033508, 2007. 

  31. Yu-Long Jiang*,  Jia Luo, Ye Yao,Fang Lu, Guo-Ping Ru, Xing-Ping Qu, and Bing-Zong Li, “Schottkycontact  barrier heightextraction by admittancemeasurement”, J. Appl. Phys., 101, p. 053705, 2007. 

  32. Yu-Long Jiang*,  Qi Xie, C.Detavernier, R. L. Van Meirhaeghe, Guo-Ping Ru, Xing-Ping Qu,  Bing-Zong Li, An-PingHuang, and PaulK Chu,“Oxidationsuppression in ytterbium silicidation by Ti/TiN bi-capping layer”, J.  Vac. Sci.Technol. A, 25, pp. 285-289, 2007. 

  33. Yu-Long Jiang*, Guo-Ping  Ru, Xing-Ping Qu, Bing-Zong Li, C.Detavernier, R.  L.   Van Meirhaeghe, “Lineargrowth of Ni2Si thinfilm on n+/p junction  atlowtemperature”, J. Mater. Res.,  21, pp.3017-3021, 2006. 

  34. Yu-Long Jiang*,  Guo-Ping Ru, Xing-PingQu, Bing-Zong Li, AdityaAgarwal, John Poate, KhalidHossain,  and Wayne Holland,“Arsenicredistributioninduced by low temperature Ni  silicidation at 450oConshallow junctions”, J.Electron. Material.,35,pp. 937-940, 2006. 

  35. Yu-Long Jiang*,  AdityaAgarwal,Guo-Ping Ru, GaryCai, and Bing-Zong Li, “Nickelsilicide  formation on shallowjunctions”, Nucl.  Instr. and Meth. Phys. Res. B, 237, pp.160-166, 2005. 

  36. Yu-Long Jiang*,  Guo-Ping Ru, WeiHuang, Xing-Ping Qu, AdityaAgarwal, YongLiu, Bing-Zong Li,  AdityaAgarwal, GaryCai, John Poate, C.   Detavernier, and R.  L.  VanMeirhaeghe, “Electricalcharacterization of NiSi/Si interfaces formed by a single and atwo-steprapidthermalsilicidation”,  Semicond.Sci. Technol., 20, pp. 716-719,  2005. 

  37. Yu-Long Jiang*,  Guo-Ping Ru,Jian-Hai Liu, Xing-Ping Qu, and Bing-Zong Li, “Thereaction  characteristics ofultra thin Ni film on undopedand doped Si (100)”, J. Electron. Material,33, pp. 770-773,  2004. 

  38. Yu-Long Jiang,  AdityaAgarwal,Guo-Ping Ru*, Xing-Ping Qu, JohnPoate, Bing-Zong Li, and  WayneHolland, “Nickelsilicidationonn andp-type junctions at 300oC”,  Appl. Phys.Lett., 85, pp. 410-412,  2004. 

  39. Yu-Long Jiang,  Guo-Ping Ru*, FangLu, Xing-Ping Qu, Bing-Zong Li, and Shi-Ning Yang, “Ni/Si  solidphase reaction studiedbytemperature-dependent current-voltage technique”,  J. Appl. Phys., 93, pp. 866-870, 2003. 

  40. Yu-Long Jiang*, Schottkybarrierheight modulation for advanced source/drain contact,Proceedingsof 19th Asia-Pacificworkshop on fundamentalsand  applications of advanced semiconductordevices20116, 韩国大田)pp.  66-70. Invited 

  41. Yu-Long Jiang*,  Guo-Ping Ru,Xing-Ping Qu, Bing-Zong Li, “Oxidation SuppressionforYbSi2-x Formation  and New Method to ExtractSchottky BarrierHeightby Admittance Measurement”, Extented Abstracts of the7thInternational  Workshop onJunctionTechnology (IWJT2007) (20076, 日本京都)pp.  93-98.(Invited




 荣誉与奖励

复旦大学卓学计划教授,2010年度复旦大学教学成果奖一等奖第一完成人,复旦大学2011年度青年教师教学比赛一等奖,上海市2007年度青年科技启明星,教育部2008年度霍英东教育基金会资助项目获得者。

2003.02:首届GE基金会全国大学生技术创新竞赛“爱迪生杯”获得者;

2003.12:国际电子电气工程师协会电子器件分会全球研究生奖获得者(IEEE EDS Graduate Student Fellowship);

2006.12:2005年度上海市优秀博士学位论文获得者;

2007.01:复旦微电子研究院优秀新员工奖;

2009.01:信息学院三等奖教金;

2010.01:信息学院二等奖教金;

2010.06:复旦大学教学成果奖一等奖,第一获奖人;

2011.01:复旦微电子研究院先进个人;

2011.06:信息学院优秀共产党员;

2011.12:复旦大学首届青年教师教学竞赛一等奖;

2012.05:  2011-2012年度“学生学术科技创新行动计划”优秀指导教师;

2012.07:信息学院2011年度本科教学先进个人;

2013.01:信息学院二等奖教金;

2014.06:上海市教学成果奖二等奖

2016.07:复旦大学教学贡献奖


屈新萍 教授,博导 | 复旦大学

研究领域

  1. 纳米体系互连工艺中新材料、新结构、新工艺研究,包括原子层淀积 金属和氮化物研究、新型超薄扩散阻挡层、无籽晶铜互连电镀研究、新型化学机械抛光工艺、超低K介质研究

  2. 纳米系统的接触和互连技术研究:包括石墨烯互连、新型纳米线互连及其他新型互连;

  3. 纳米光刻技术研究:包括利用Nanoimprint技术制备新型纳米结构及纳光学、纳电子学研究;利用DSA光刻技术制备超细纳米结构研究

  4. 低温高迁移率薄膜晶体管研究,包括低温多晶硅、透明氧化物薄膜及纳米线晶体管制备与研究;


论文与著作

Journal papers: (*: Corresponding author)

  1. Guang Yang, Peng He, Xin-Ping Qu, Inhibition effect of glycine on molybdenum corrosion during CMP in alkaline H2O2 based abrasive free slurry, Applied Surface Science 427 (2018) 148–155

  2. Xin-Ping Qu*, Guang Yang, Peng He, Hui Feng, chemical mechanical polishing of Mo using H2O2 as oxidizer in silica based slurries, ECS J. Solid State Sci. Tech., (7) P470-P476 (2017)

  3. Xu Wang, Lin-Tao Liu, Peng He, Xin-Ping Qu*, Jing Zhang, Shuhua Wei, Y. A. Mankelevich, and M. R. Baklanov*, Study of CoTa alloy as barrier layer for Cu/low-k interconnects, J. Physics D: Applied Physics, 50, 405306 (2017).

  4. Xu Wang, Peng He, Guang Yang, and Xin-Ping Qu*, Effect of CoxMoy as Single Barrier Layer on Properties of Directly Electroplated Copper FilmsJ. Electrochem. Soc. 163(14): D794-D800, 2016

  5. Chun-Feng Hu, Ji-Yu Feng, Jin Zhou, Xin-Ping Qu*, Investigation of oxygen and argon plasma treatment on Mg-doped InZnO thin film transistors, Appl. Phys. A, 122, 941 (2016).

  6. Xu Wang, Li-Ao Cao, Guang Yang, Xin-Ping Qu, Study of direct Cu electrodeposition on ultra-thin Mo for copper interconnectMicroelectronic engineering, 164, 7-13 (2016)

  7. Wen-Zhong Xu, Jing-Bo Xu, Hai-Sheng Lu, Jing-Xuan Wang, Zheng-Jun Hu, and Xin-Ping Qu*Direct Copper Plating on Ultra-Thin Sputtered Cobalt Film in an Alkaline Bath, J. Electrochem. Soc. 160(12), D3075-D3080( 2013)

  8. Xin-Ping Qu*, Xiao-Meng Zhang, Ying Zhao, Shao-Ren Deng and Christophe Detavernier, Improved Diffusion Barrier Properties and NiSi Thermal Stability for the Cu Contact with the Ru/TaSiN Stack on NiSi/Si, ECS Solid State Lett.2 (1), P1-P3, (2013)

  9. Hai-Sheng Lu, Knut Gottfried, Nicole Ahner, Stefan Schulz, Xin-Ping Qu*, Investigation of CH4, NH3, H2 and He plasma treatment on porous low-films and its effects on resisting moisture absorption and ions penetrationMicroelectronic Engineering, 106, 85(2013).

  10. Wen-Jun Zhang, T. Qiu, X.P.Qu* and P. K. Chu, Atomic layer deposition of platinum thin films on anodic aluminium oxide templates as surface-enhanced Raman scattering substrates, Vacuum89, 257(2013)

  11. Tao Wang, Qu Xinping*Research on ZnO Nanorods Grown on Si Substrate Etched by TMAH as Si Solar Cell Antireflection LayerJournal of inorganic materials, 28(4), 420, 2013in Chinese. (湿法腐蚀硅片并生长氧化锌纳米棒作为太阳能电池减反层研究无机材料学报)

  12. Yong-Wei Wang, Xin-Ping Qu*, Study on CMP of copper interconnect with novel Mo-based diffusion barriers, Semiconductor Technology, 37(11),846. 2012(in Chinese).(Mo基新型扩散阻挡层的化学机械抛光研究,半导体技术)

  13. Jia-Hong Wu, Shu-Yi Liu, Shuti Li, Yu-Long Jiang, Guo-Ping Ru, and Xin-Ping Qu*The influence of ZnO seed layers on the n-ZnO nanostructures/p-GaN LEDs,Applied Physics A, 109 (2), 489-495 (2012) (3次引用)

  14. Xu Zeng, Jing-Xuan Wang, Hai-Sheng Lu, Fei Chen, Xiao-Meng Zhang and Xin-Ping Qu*Improved Removal Selectivity of Ruthenium and Copper by Glycine in Potassium Periodate (KIO4)-Based Slurry, J. Electrochem. Soc. 159(11), C525-C529( 2012)

  15. Shao-Feng Ding, Qi Xie, Fei Chen, Hai-Sheng Lu, Shao-Ren Deng, David Deduytsche, Christophe Detavernier, Xin-Ping Qu*Improved thermal stability and electrical performance by using PEALD ultrathin Al2O3 film with Ta as Cu diffusion barrier on low k dielectrics,? ECS Solid State Lett. 1(3), 54-P56 (2012)

  16. Xu Zeng, Hong-Qi Sun, Yan-Feng He, Xin-Ping Qu*, Reflow discoloration formation on pure tin (Sn) surface finishMicroelectronic reliability, 52, 1153–1156 (2012)

  17. Hai-Sheng Lu, Xu Zeng, Jing-Xuan Wang, Fei Chen, Xin-Ping Qu*, The effect of Glycine and Benzotriazole on corrosion and polishing properties of cobalt in acid slurryJ. Electrochem. Society, 15(9), C383-387 (2012)

  18. Hai-Sheng Lu, Jing-Xuan Wang, Xu Zeng, Fei Chen, Xiao-Meng Zhang, Wen-Jun Zhang, and Xin-Ping Qu*, The Effect of H2O2 and 2-MT on the Chemical Mechanical Polishing of Cobalt Adhesion Layer in Acid Slurry, Electrochemical and Solid-State Letters15 (4) H97-H100 (2012)

  19. Shao-Feng Ding, Qi Xie, Steve Mueller, Thomas Waechtler, Hai-Sheng Lu, Stefan E. Schulz, Christophe Detavernier, Xin-Ping Qu*, and Thomas Gessner, The Inhibition of Enhanced Cu Oxidation on Ruthenium/Diffusion Barrier Layers for Cu Interconnects by Carbon Alloying into RuJ.Electrochem.Soc., 158 (12) H1228 (2011)

  20. Shao-Feng Ding, Hai-Sheng Lu, Fei Chen, Yu-Long Jiang, Guo-Ping Ru, David Wei Zhang, and Xin-Ping Qu*Density Functional Theory Study of Cu Adhesion on Rh, Ir, Pd, Ta, Mo, Ru, Co, and Os SurfacesJapanese J. Applied Physics 50, 105701 (2011).

  21. Chen Gao , Zhen-Cheng Xu, Shao-Ren Deng, Jing Wan, Yifang Chen, Ran Liu, Ejaz Huq, Xin-Ping Qu*, Silicon nanowires by combined nanoimprint and angle deposition for gas sensing applicationsMicroelectronic Engineering , 88, 2100–2104 (2011)

  22. Ying Zhao, Mi Zhou, Guo-Ping Ru, Yu-Long Jiang, Xin-Ping Qu*Cu contact on NiSi/Si with thin Ru/TaN barrierMicroelectronic Engineering, 88, 545–547 (2011)

  23. Ji Li, Hai-Sheng Lu, Yong-Wei Wang, Xin-Ping Qu*Sputtered Ru-Ti, Ru-N and Ru-Ti-N films as Cu diffusion barrier, Oral presentation on MAM2010, Microelectronic engineering, 88, 635–640 (2011)

  24. Qi Xie, Yu-Long Jiang, Keon De Keyser, Christophe Detavernier, Davy Deduytsche, Guo-Ping Ru, Xin-Ping Qu*, K.N. Tu, The effect of sputtered W-based carbide diffusion barriers on the thermal stability and void formation in copper thin filmsMicroelectronic Engineering, 87, 2535 (2010)

  25. Shao-Feng Ding, Shao-Ren Deng, Hai-Sheng Lu, Yu-Long Jiang, Guo-Ping Ru, David Wei Zhang and Xin-Ping Qu* , Cu Adhesion on Tantalum and Ruthenium Surface: Density Functional Theory StudyJ. Appl. Phys. 107, 103534 (2010)

  26. Yu-Long Jiang, Xin-Ping Qu*, Guo-Ping Ru, Bing-Zong Li, Schottky barrier height lowering induced by CoSi2 nanostructure, Applied Physics A99, 93–98(2010)

  27. Chen Gao, Shao-Ren Deng, Jing Wan, Bing-Rui Lu, Ran Liu, Ejaz Huq, Xin-Ping Qu*, Yifang Chen, 22nm silicon nanowire gas sensor fabricated by trilayer nanoimprint and wet etchingMicroelectronic Engineering, 87, 927–930 (2010)

  28. Tao Chen, Shu-Yi Liu, Qi Xie, Yu-Long Jiang, Guo-Ping Ru, Ran Liu, Xin-Ping Qu*, Patterned ZnO nanorods network transistor fabricated by low-temperature hydrothermal processMicroelectronic Engineering, 87, 1483–1486, (2010)

  29. Shao-Ren Deng, Bing-Rui Lu, Bi-Qing Dong, Jing Wan, Zhen Shu, Jing Xue, Yifang Chen, Ejaz Huq, Ran Liu and Xin-Ping Qu*Effective polarization control of metallic planar chiral metamaterials with complementary rosette pattern fabricated by nanoimprint lithographyMicroelectronic Engineering, 87,? 985–988(2010)

  30. Tao Chen, Shu-Yi Liu,? Qi Xie, Christophe Detavernier, R.L. Van Meirhaeghe,Xin-Ping Qu*In situ and ex situ investigation on the annealing performance of the ZnO film grown by ion beam depositionJ Mater Sci: Mater Electron.? 21,88–95(2010)

  31. Tao Chen, Shu-Yi Liu,? Qi Xie, Christophe Detavernier, R.L. Van Meirhaeghe, Xin-Ping Qu*, The effects of deposition temperature and ambient on the physical and electrical performance of DC-sputtered n-ZnO/p-Si heterojunction, Applied Physics A98, 357–365 (2010)

  32. Qi Xie, Yu-Long Jiang, Jan Musschoot, Davy Deduytsche, Christophe Detavernier, Roland L. Van Meirhaeghe, Sven Van den Berghe, Guo-Ping Ru, Bing-Zong Li, Xin-Ping Qu*, ?Ru thin film grown on TaN by plasma enhanced atomic layer depositionThin Solid Films, 517, 4689-4693 (2009)

  33. Shu-Yi Liu, Tao Chen, Yu-Long Jiang, Guo-Ping Ru, and Xin-Ping Qu*The effect of post-annealing on the electrical properties of well-aligned n-ZnO nanorods / p-Si heterojunctionJ. Appl. Phys. 105, 114504 (2009)

  34. Jing Wan, Shao-Ren Deng, Rong Yang, Zhen Shu, Bing-Rui Lu, Shen-Qi Xie, Yifang Chen, Ejaz Huq, Ran Liu , Xin-Ping Qu*, Silicon nanowire sensor for gas detection fabricated by nanoimprint on SU8/SiO2/ PMMA trilayer, Microelectronic Engineering,86, 1238–1242 (2009)

  35. Jing Wan, Zhen Shu, Shao-Ren Deng, Shen-Qi Xie, Bing-Rui Lu, and Ran Liu, Yifang Chen, Xin-Ping Qu*, Duplication of nanoimprint templates by a novel SU-8/SiO2/PMMA trilayer technique, J. Vac. Sci. Technol. B 27(1), 19-22, 2009 (Selected for the January 26, 2009 issue of Virtual Journal of Nanoscale Science & Technology)

  36. Shu-Yi Liu, Tao Chen, Jing Wan, Guo-Ping Ru, Bing-Zong Li and Xin-Ping Qu*, The effect of pre-annealing of sputtered ZnO seed layers on growth of ZnO nanorods through a hydrothermal method, ?Applied Physics A94(4),775, (2009)

  37. Qi Xie, Jan Musschoot, Davy Deduytsche, Roland L Van Meirhaeghe, Christophe Detavernier, Sven Van den Berghe, Yu-Long Jiang, Guo-Ping Ru, Bing-Zong Li, Xin-Ping Qu*Growth Kinetics and Crystallization Behavior of TiO2 Films Prepared by Plasma Enhanced Atomic Layer Deposition, J. Electrochem. Soc. 155, H688-H692 (2008)

  38. Mi Zhou, Ying Zhao, Wei Huang, Bao-Min Wang, Guo-Ping Ru, Yu-Long Jiang, Ran Liu, Xin-Ping Qu*Cu contact on NiSi substrate with a Ta/TaN barrier stack, Oral presentation at MAM-2008 conference, March, 2-5, 2008, Dresden, Microelectronic Engineering, 85,? 2028–2031(2008)

  39. Qi Xie, Jan Musschoot, Christophe Detavernier, Davy Deduytsche, Roland L Van Meirhaeghe, S. Van den Berghe, Yu-Long Jiang, Guo-Ping Ru, Bing-Zong Li and Xin-Ping Qu*, Diffusion barrier properties of TaNx films prepared by plasma enhanced atomic layer deposition from PDMAT with N2 or NH3 plasmaMicroelectronic Engineering,85, 2059–2063 (2008)

  40. Qi Xie, Yu-Long Jiang, C. Detavernier, D. Deduytsche, R. L. Van Meirhaeghe, Guo-Ping Ru, Bing-Zong Li, Xin-Ping Qu*, Atomic layer deposition of TiO2 from tetrakis-dimethyl-amido titanium or Ti isopropoxide precursors and H2OJ. Appl. Phys. 102, 083521 (2007).

  41. Mi Zhou, Chen Tao, Jing-Jing Tan, Guo-Ping Ru, Yu-Long Jiang, Ran Liu, Xin-Ping Qu*, Effects of pretreatment of TaN substrates on atomic layer deposition growth of Ru thin filmsChin. Phys. Lett. 24, 1400 (2007).

  42. Xin-Ping Qu*Jing-Jing Tan, Mi Zhou, Qi Xie, Tao Chen, Guo-Ping Ru, Improved barrier properties of ultrathin Ru film with TaN interlayer for copper metallizationAppl. Phys. Lett., 88, 151912 (2006).

  43. Xin-Ping Qu*, Peng Duan, Yan-Qing Wu, Tao Chen, Guang-Wei Wang, Guo-Ping Ru, Bing-Zong Li, Investigation of Ni reaction with sputtered SiGe thin film on SiO2 substrateJ. Vac. Sci. Tech.A24, 20 (2006).

  44. Xin-Ping Qu*, Mi Zhou, Tao Chen, Qi Xie, Guo-Ping Ru, Bing-Zong Li, Study of Ultrathin Vanadium Nitride as diffusion barrier for copper interconnect, Microelectronic Engineering, 83,236 (2006).

  45. Jing-Jing Tan, Xin-Ping Qu*, Qi Xie, Guo-Ping Ru, Bing-Zong Li, The properties of Ruthenium on Ta-based barriers , Thin Solid films504, 231-234 (2006).

  46. Qi Xie, Xin-Ping Qu*, Jing-Jing Tan, Yu-Long Jiang, Mi Zhou, Tao Chen, Guo-Ping Ru, Superior thermal stability of Ta/TaN bi-layer structure for copper metallizationApplied Surface Science, 253, 1666-1672 (2006)

  47. Jing-Jing Tan, Xin-Ping Qu*, et.al, Ultra-thin Ru/TaN bilayer as diffusion barrier for copper metallizationChin. J. Semiconductors, 27, 197-201 (2006). (in Chinese)

  48. Xin-Ping Qu*, Hua Lu, Tao Peng, Guo-Ping Ru, and Bing-Zong Li, Effects of preannealing on the diffusion barrier properties for ultrathin W-Si-N thin filmThin Solid Films,462-463, 67 (2004).

  49. Xin-Ping Qu*, Yu-Long Jiang, Guo-Ping Ru, Fang Lu, Bing-Zong Li, C. Detavernier, and R. L. Van Meirhaeghe, Thermal stability, phase and interface uniformity of Ni-silicide formed by Ni-Si solid-state reactionThin Solid Films,462-463, 146 (2004).

  50. Peng Duan, Xin-Ping Qu*, Ping Liu, Z. H. Xu, G. P. Ru, B. Z. Li, Ni induced crystallization of amorphous SiGe, Chin. J. Semiconductors, 25(11), 1453-1457, 2004. (in Chinese)

  51. H. Lu, Xin-Ping Qu*, G.W. Wang, G. P. Ru, B.Z.Li, Ultra-thin W-Si-N films as diffusion barrier between Cu and Si, Chin. J. Semiconductors, 24(6),164-168 (2003)Detavernier C, Qu Xin-Ping, Van Meirhaeghe RL, et al. Mixing entropy and the nucleation of silicides: Ni-Pd-Si and Co-Mn-Si ternary systemsJ MATER RES 18 (7): 1668-1678 (2003)

  52. Xin-Ping Qu*, Bei-Lei Xu, Guo-Ping Ru, Bing-Zong Li, W. Y. Cheung, S. P. Wong, P. K. Chu, Solid phase epitaxial growth of CoSi2 by Co/C/Si(100) reaction,Chin. J. Semiconductors,24(1), 63 (2003). (in Chinese) (2003年1月)

  53. Bei-Lei Xu, Xin-Ping Qu*, et.al, Epitaxial growth of CoSi2 by Co/a-GeSi/Ti/Si multilayer solid state reactionResearch and development of solid state electronics, 23,149 (2003)(in Chinese)

  54. Xin-Ping Qu*, Guo-Ping Ru, et.al, Solid state reaction of Ni/Pd/Si and improvement of NiSi thermal stability ,Chin. J. Semiconductors,23, 1173(2002)(in Chinese)

  55. Xin-Ping Qu, Guo-Ping Ru, Yong-Zhao Han, Bei-Lei Xu, Bing-Zong Li, Ning Wang, and Paul K. Chu, Epitaxial growth of CoSi2 film by Co/a-Si/Ti/Si(100) multilayer solid state reactionJ. Appl. Phys.89, 2641 (2001).

  56. Qu XP, Ru GP et.al,,Characterization of Schottky barrier contact between ultra thin epitaxial CoSi2/n-Si, Chin. J. Semiconductors21473-479 2000

  57. Qu XP, Ru GP, et.al, Investigation of Co/Si/Ti/Si and Co/Si../Ti/Si multilayer solid phase reaction applied in self-aligned elevated silicide strucuture, Chin. J. Semiconductors,21,197(2000)

  58. Xin-Ping Qu, Bing-Zong Li, et.al, Heteroepitaxial growth of CoSi2 on Si(100) substrate by Co/Si/Ti/Si multilayer solid phase reaction, Chin. J. Semiconductors , 19, 641 (1998)

  59. Xin-Ping Qu, Bing-Zong Li, Hetero-epitaxy of CoSi2 on Si substrate, Research and progress of solid state electronics, ?18, 449 (1998)? 



荣誉与奖励


  1. 1998年国际集成电路和固态技术会议上获“最佳研究生论文奖”

  2. 1999年获教育部科技进步三等奖

  3. 2002年入选复旦大学“世纪之星”计划,获得“教学和科研综合奖”

  4. 2003年入选上海市教育委员会评选的“2003年度上海高校优秀青年教师后备人选”。

  5. 2004年入选上海市科委“科技启明星”人才项目

  6. 2005年获得复旦大学复华奖教金,并评为“复旦大学优秀世纪之星”

  7. 2008年获得上海市科委“启明星跟踪”人才项目

  8. 2008年度复旦大学陆宗霖奖教金

  9. 2009年获得“上海高校优秀青年教师”荣誉称号

  10. 2009年获得“复旦大学2009年度优秀研究生导师”称号

  11. 2011年获得“教育部新世纪优秀人才”称号

  12. 2012年获得上海市“曙光学者”称号


刘冉 教授,博导 | 复旦大学

研究领域

  • 微纳电子/光电子器件工艺技术

  • 先进IC互连技术

  • 微纳材料结构加工与分析技术

  • 生物电子技术


论文与著作

  1.  Materials and Physical Properties of High-k Oxides, Ran Liu, Materials Fundamentals of Gate Dielectrics, Ed. by A.A. Demkov and A. Navrotsky (eds.)

  2. Raman Characterization of Si/Si1-xGex Heterostructures, Ran Liu, SiGeC Alloys: Growth, Properties, and Devices, Ed. By S.T. Pantelides and S. Zollner, Taylor & Francis Books, Inc.


兼职

  • 美国亚利桑那州立大学客座教授

  • 中科院上海技术物理研究所访问教授

  • 欧洲固体器件研究年会(ESSDERC)Technical Programme Committe 成员

  • 复旦大学北欧中心Research Fellow

  • Semi China技术顾问委员会成员




周鹏 教授,博导 | 复旦大学

研究领域

  1. 新型二维层状半导体电子器件工艺与特性研究;

  2. 下一代CMOS兼容非挥发存储器工作机制与制造技术;


论文与著作

出版著作:

  1. 周 鹏,《半导体存储器概论》,北京邮电大学出版社,ISBN:978-7-5635-3658-0,2013,345千字。

  2. Peng Zhou, Lin Chen,Hangbing Lv,Haijun Wan,Qingqing Sun, Chapter ‘Nonvolatile Memory Device: Resistive Random Access Memory’ in Book ‘Nano-Semiconductors Device and Technology’,Taylor & Francis Group, ISBN:978-1-4398-4835-7,2011,20千字。本书已被科学出版社引进翻译出版。

  3. Peng Zhou, Lin Chen,Hangbing Lv,Haijun Wan,Qingqing Sun, Chapter ‘Nonvolatile Memory Device: Resistive Random Access Memory’ in Book ‘Nanoscale Semiconductor Memories: Technology and Applications’,Taylor & Francis Group,ISBN: 978-1-4665-6060-4,2013,20千字。

 

 

部分代表性论文

 

  1. Chunsen Liu, Xiao Yan, Jianlu Wang, Shijin Ding, Peng Zhou* and David Wei Zhang*, Eliminating over-erase behavior by designing energy band in high speed charge-trap memory based on WSe2, (Small, 1604128, 2017). (通信作者)

  2. Yawei Dai, Wenzhong Bao, Linfeng Hu, Chunsen Liu, Lin Chen, Qingqing Sun, Shijin Ding, Peng Zhou* and David Wei Zhang, Forming free and ultralow power erase operation in atomically crystal TiO2 resistive switching, (2D Materials, 4, 2017) doi.org/10.1088/2053-1583. (通信作者)

  3. E. Zhang, P. Wang, Z. Li, H. Wang, C. Song, C. Huang, Z.G. Chen, L. Yang, K. Zhang, S. Lu, W.Y. Wang, S. Liu, H. Fang, X. Zhou, H. Yan, J. Zou, X.G. Wan, P. Zhou*, W. Hu, and F.X. Xiu, Tunable ambipolar polarization-sensitive photodetectors based on high-anisotropy ReSe2 nanosheets (ACS Nano, 10, 8067 -8077,2016). (通信作者)

  4. Peng Zhou*, Xiongfei Song, Xiao Yan, Chunsen Liu,Lin Chen, Qingqing Sun, and David Wei Zhang, Controlling the work function of molybdenum disulfide by in situ metal deposition(Nanotechnology,27,344002, 2016).

  5. X. Yuan, L.Tang, S.S. Liu, P. Wang, Z.G. Chen, C. Zhang, Y. W. Liu, J. Zou, Peng Zhou*,W. Hu, F.X. Xiu,Arrayed van der Waals vertical heterostructures based on 2D GaSe grown by molecular beam epitaxy,(Nano Letters,2015,15(5):3571-3577). (通信作者)(ESI 高引)

  6. E. Zhang, Y. Jin, X. Yuan, W.Y. Wang, C. Zhang, L. Tang, S.S. Liu, Peng Zhou*,W. Hu, F.X. Xiu,ReS2-based field-effect transistors and photodetectors, (Advanced Functional Materials,25(26):4076-4082,2015). (通信作者)

  7. Enze Zhang, Weiyi Wang, Cheng Zhang, Yibo Jin, Guodong Zhu, Qingqing Sun, David Wei Zhang, Peng Zhou,* and Faxian Xiu, Tunable charge-trap memory based on few-layer MoS2, (ACS Nano,9,612-619 ,2015). (通信作者)

  8. Peng Zhou*, Songbo Yang, Qingqing Sun, Lin Chen, Pengfei Wang, Shijin Ding & David Wei Zhang, Direct deposition of uniform high-k dielectrics on graphene,(Scientific Reports ,4(6448),2014). (通信作者)

  9. Songbo Yang, Peng Zhou,* Lin Chen, Qingqing Sun, Pengfei Wang, Shijin Ding, Anquan Jiang and David Wei Zhang, Direct observation of the work function evolution of graphene-two-dimensional metal contacts, (Journal of Materials Chemistry C , 2,8042—8046,2014). (通信作者)

  10. Yan Shen, Songbo Yang , Peng Zhou*, Qingqing Sun, Pengfei Wang, Li Wan,Jing Li, Liangyao Chen, Xianbao Wang, Shijin Ding, David Wei Zhang, Evolution of the band-gap and optical properties of graphene oxide with controllable reduction level,(Carbon,62,157-164,2013). (通信作者)

  11. Peng Zhou, Hong-Qiang Wei, Qing-Qing Sun, Peng-Fei Wang, Shi-Jin Ding, An-Quan Jiang and David Wei Zhang, The tunable electrical properties of graphene nano-bridges, (Journal of Materials Chemistry C , 2,2548-2552,2013). (通信作者)

  12. Peng Zhou, Li Ye, Qing-Qing Sun, Peng-Fei Wang, An-Quan Jiang, Shi-Jin Ding, David Wei Zhang, Effect of concurrent joule heat and charge trapping on RESET for NbAlO fabricated by atomic layer deposition ,(Nanoscale Research Letters ,8, (2013), 91(1-5).

  13. Peng Zhou, Li Ye, Qing-Qing Sun, Lin Chen, Shi-Jin Ding, An-Quan Jiang, David Wei Zhang, The temperature dependence in nano-resistive switching of HfAlO (IEEE Transactions on Nanotechnology 11, 1059, 2012)

  14. Lu-Hao Wang, Wen Yang, Qing-Qing Sun, Peng Zhou, Hong-Liang Lu, Shi-Jin Ding,and David Wei Zhang, The mechanism of the asymmetric SET and RESET speed of graphene oxide based flexible resistive switching memories(Applied Physics Letters 100, 063509, 2012) (通信作者)

  15. Shen Y, Zhou P*, Sun Q. Q, Wan L., Li J., Chen L. Y., Zhang D. Wand Wang X.B, Optical investigation of reduced graphene oxide by spectroscopic ellipsometry and the band-gap tuning (Applied Physics Letters 99, 141911, 2011) (通信作者)

  16. Sun Q.Q , Gu J. J, Chen L, Zhou P*, Wang P. F, Ding S.J, and Zhang D.W, Controllable filament with electric field engineering for resistive switching Uniformity (IEEE Electron Device Letters. 32,1167-1169, 2011) (通信作者)

  17. Wan H. J, Zhou P*, Ye L, Lin Y. Y, Tang T. A, Wu H. M, and Chi M. H, In situ observation of compliance-current overshoot and its effect on resistive switching (IEEE Electron Device Letters. 31, 246-248, 2010) (通信作者)

  18. Zhou P, Li J ,Chen L.Y , Gao C , Lin Y , Tang T.A, Resistance switching study of stoichiometric ZrO2 films for non-volatile memory application (Thin Solid Films 518,5652-5655,2010)

  19. Zhou P ,Yin M, Wan H J,Lv H. B, Tang T. A and Lin Y. Y, Role of TaON interface for CuxO resistive switching memory based on a combined model(Applied Physics Letters 94, 053510, 2009)

  20. Chen Y. R, Zhou P*, Li J and Chen L. Y, Electrical levels of defect investigation of ZrO2 thin film by spectroscopic ellipsometry, (Journal of Vacuum Science &Technology B, 27,1030-1034, 2009)(通信作者)

  21. Yin M, Zhou P*, Lv H. B, Xu J, Song Y. L, Fu X. F, Tang T. A, Chen B. A and Lin Y. Y, Improvement of resistive switching in CuxO using new RESET mode (IEEE Electron Device Letters. 29, 681-683, 2008) (通信作者)

  22. Zhou P, Lv H. B, Yin M., Tang L, Song Y. L, Tang T. A, Lin Y. Y, Bao A, A. Wu, S. Cai, H. Wu, C. Liang, and M. H. Chi,Performance improvement of CuOx with gradual oxygen concentration for nonvolatile memory application (Journal of Vacuum Science & Technology B, 26,1030-1033, 2008)

  23. Lv Hang-Bing, Zhou Peng*, Fu Xiu-Feng, Yin Ming, Song Ya-Li,Tang Li, Tang Ting-Ao, Lin Yin-Yin, Polarity-free resistive switching characteristics of CuxO films for non-volatile memory applications (Chin. Phys. Lett. 25, 1087-1090, 2008) (通信作者)

  24. Wu X, Zhou P*, Li J, Chen L.Y, Lv H.B, Lin Y.Y, Tang T.A, Reproducible unipolar resistance switching in stoichiometric ZrO2 films (Applied Physics Letters 90 (18): 183507, 2007) (通信作者)

  25. Zhou P, Shin Y. C, Choi B. J, Choi S, Hwang C. S, Lin Y. Y, Lv H. B, Yan X. J, Tang T. A, Chen L. Y, and Chen B. M, Dynamic threshold switching behavior of Ge2Sb2Te5 and Sb-doped Ge2Sb2Te5 thin films using scanning electrical nanoprobe (Electrochemical and Solid-State Letters, 10, H281-H283, 2007)

  26. Zhou P, You G. J, Li J, Wang S.Y, Qian S.X, Chen L.Y, Annealing effect of linear and nonlinear optical properties of Ag:Bi2O3 nanocomposite films, (Optics Express,13(5), 1508-1514, 2005)

  27. Zhou P, You G.J, Li Y.G., Han T, Li J, Wang S.Y, Chen L.Y, Liu Y and Qian S.X,Linear and ultrafast nonlinear optical response of Ag : Bi2O3 composite films (Applied Physics Letters 83 (19): 3876-3878, 2003)



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